Generalised effective mass theory of sub-surface scanning tunnelling microscopy : application to weakly bound impurity states

摘要

We apply our generalised effective mass theory of sub-surface scanning tunnelling microscopy (STM) (Phys. Rev. B 19, 195304 (2010)) to simulate STM images of electronic states localised around sub-surface Si dopant atoms in GaAs. In the case of these shallow impurity-states, we demonstrate that electrostatic effects from image-charges and from the STM tip have a strong influence on the sub-surface state and hence the simulated image.